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  inchange semiconductor isc product specification isc silicon npn power transistor 2SC3376 description collector-emiiter breakdown voltage- : v (br)ceo = 800v(min.) high speed switching applications switching regulator and high vo ltage switching applications. high speed dc-dc converter applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 5 a i b b base current-continuous 1 a p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3376 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 900 v v ce( sat ) collector-emitter saturation voltage i c = 0.8a; i b = 0.16a 0.6 v v be( sat ) base-emitter saturation voltage i c = 0.8a; i b = 0.16a 1.2 v i cbo collector cutoff current v cb = 800v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe dc current gain i c = 0.8a; v ce = 5v 10 switching times; resistive load t r rise time 1.0 s t s storage time 4.0 s t f fall time i b1 = 0.08a; i b2 = -0.2a; v cc 400v; r l = 500 1.0 s isc website www.iscsemi.cn


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